Structure and electrical resistivity of CeNiSb3 |
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| Authors: | Robin T Macaluso Richard E Sykora Arthur Mar H Lee Julia Y Chan |
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| Institution: | a Department of Chemistry, Louisiana State University, 232 Choppin Hall, Baton Rouge, LA 70803, USAb Department of Chemistry, Auburn University, Auburn, AL 36849, USAc Department of Chemistry, University of Alberta, Edmonton, Alberta, Canada T6G 2G2d National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32306, USA |
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| Abstract: | The ternary antimonide CeNiSb3 has been prepared from an Sb flux or from reaction of Ce, NiSb, and Sb above 1123 K. It crystallizes in the orthorhombic space group Pbcm with Z=12 and lattice parameters a=12.6340(7) Å, b=6.2037(3) Å, and c=18.3698(9) Å at 193 K. Its structure consists of buckled square nets of Sb atoms and layers of highly distorted edge- and face-sharing NiSb6 octahedra. Located between the ∞2Sb] and ∞2NiSb2] layers are the Ce atoms, in monocapped square antiprismatic coordination. There is an extensive network of Sb-Sb bonding with distances varying between 3.0 and 3.4 Å. The structure is related to that of RECrSb3 but with a different stacking of the metal-centered octahedra. Resistivity measurements reveal a shallow minimum near 25 K that is suggestive of Kondo lattice behavior, followed by a sharp decrease below 6 K. |
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| Keywords: | Cerium Nickel Antimonide Crystal structure Resistivity |
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