Processing and structure of gallium nitride—gallium oxide platelet nanostructures |
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| Authors: | Jing Tong |
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| Institution: | Department of Chemical Engineering and Materials Science, University of California at Davis, One Shields Avenue, Room 2015, Davis, CA 95616, USA |
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| Abstract: | Gallium nitride-gallium oxide structures were formed by heat-treating gallium nitride (GaN) powders in several gas environments at temperatures from 400°C to 900°C. The platelet nanostructured particles were examined at several stages of oxidation by microscopic, structural, chemical and optical spectroscopic techniques. Particle morphology, nanophase characterization and photoluminescence data showed that the oxide layers passivate the GaN platelets surfaces and significantly reduce the yellow emission while enhancing near band-edge emission. |
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| Keywords: | GaN Ga2O3 Nanoparticles Core-shell structure Quantum confinement effect Quantum well Yellow emission Surface passivation Controlled oxidation |
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