Thermoelectric properties of photo- and thermal CVD boron and boron phosphide films

The electrical properties of n-BP films newly prepared by thermal CVD in the B₂H₆-PH₃-H₂ system were improved by a deuterium lamp excitation. High-temperature electrical conductivity and thermoelectric power of amorphous boron and polycrystalline boron phosphide films grown on silica glass were measured to evaluate the thermoelectric figure-of-merit (Z). In particular, the Z-value for photo-thermal BP films was higher (10⁻⁴/K) than that of boron films, indicating that they are promising for high-temperature thermoelectric materials.