Interaction of ultrasonic phonons with defects in hydrogenated amorphous germanium |
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| Authors: | K. L. Bhatia M. v. Haumeder S. Hunklinger |
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| Affiliation: | (1) Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart, Federal Republic of Germany;(2) Present address: Industrie-Anlagen Betriebsgesellschaft IABG, Einsteinstraße 20, D-8012 Ottobrunn, FRG |
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| Abstract: | The attenuation of acoustic surface waves of 300 MHz has been measured in sputtered films of amorphous Ge and a-GeHx (0 x0.25) at temperatures between 0.5 K and 475 K. A strong absorption maximum due to structural relaxation is found at 135 K in pure a-Ge. This absorption maximum is shifted by annealing and is suppressed by hydrogen incorporation. Below 20 K the attentuation varies linearly with temperatures in all films investigated so far.On leave from: Department of Physics, Maharshi Dayanand University, Rohtak, 124001, India |
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