Selective epitaxial growth by UHV-CVD using Si2H6 and Cl2

The conditions under which selective epitaxial growth (SEG) is achieved in UHV-CVD with Si₂H₆ are determined by the amount of Si₂H₆ molecules being supplied, and there is a critical gas supply amount (F_c) beyond which SEG will break down and lose its selectivity. The value of F_c is itself determined by two factors, growth temperature and the material used for masking, i.e. SiO₂, Si₃N₄. We found that this limiting factor of F_c was increased through the addition of a small amount of Cl₂, and that after such addition, the resulting decrease in growth rate is minimal.