| 锑化铟光伏器件温度特性分析 |
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| 引用本文： | 龚启兵.锑化铟光伏器件温度特性分析[J].红外与激光工程,1995(4). |
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| 作者姓名： | 龚启兵 |
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| 作者单位： | 航空工业总公司第○一四中心 |
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| 摘 要： | 锑化铟光伏器件一般工作在７７Ｋ。本文介绍采用金属变温杜瓦瓶在不同温度下测试了锑化铟光伏器件的光电特性，其结果显示出锑化铟光伏器件在高于７７Ｋ一段温度范围内也能满足工作需要，因此为锑化铟制冷探测器的设计提供了一定的依据。
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| 关 键 词： | 锑化铟，光电探测器，温度特性 |
ANALYSIS OF TEMPERATURE CHARACTERS-TICS OF InSb PHOTOVOLTAIC DEVICES |
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| Gong Qibing.ANALYSIS OF TEMPERATURE CHARACTERS-TICS OF InSb PHOTOVOLTAIC DEVICES[J].Infrared and Laser Engineering,1995(4). |
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| Authors: | Gong Qibing |
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| Institution: | China Aviation Industry Corporation 014 Centre Luoyang 47 1009 |
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| Abstract: | In general,the working temperature of InSb photovoltaic devices is at 77K. This report describes the work of photoelectric characteristic measurement of InSb photovoltaic devices under different temperatures by means of a temperature variable metallic dewar.The result has shown that InSb photovoltaic devices can work at a temperature range above 77K. Thus,it gives a reference to designers of InSb cooling detectors. |
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| Keywords: | InSb hotodetector Temperature characteristics |
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