离子源工艺参数对BCB胶刻蚀速率和表面粗糙度的影响

为了研究离子束刻蚀抛光过程中离子源工艺参数对刻蚀速率及表面粗糙度的影响，采用微波离子源为刻蚀离子源，以BCB胶为主要研究对象，研究了离子束能量、离子束电流、氩气流量、氧气流量对BCB胶刻蚀速率及表面粗糙度的影响，获得了离子源工艺参数与刻蚀速率及表面粗糙度演变的关系。研究结果表明，离子束能量在从400 eV增大到800 eV的过程中，刻蚀速率不断增大，从3.2 nm/min增大到16.6 nm/min；离子束流密度在从15 mA增大到35 mA的过程中，刻蚀速率不断增大，从1.1 nm/min增大到2.2 nm/min；工作气体中氧气流量从2 mL/min增大到10 mL/min的过程中，刻蚀速率会整体增大，在8 mL/min处略有下降。表面粗糙度变化不大，可以控制在1.8 nm以下。

Effect of ion source parameters on etching rate and surface roughness of benzocyclobutene

In order to obtain the effect of ion source parameters on etching rate and surface roughness in the process of ion beam etching polishing.We used the microwave ion source as the etching ion source, took benzocyclobutene (BCB) as the object of study, and did the research of the effect of ion source parameters,including the energy and current density of ion beam, the quantity of oxygen and argon,on etching rate and surface roughness,and then obtained the relationship between the ion source parameters and the etching rate, roughness evolution.It turns out that in the process of ion beam energy increasing from 400eV to 800eV, the etching rate increases constantly, increasing from 3.2 nm/min to 16.6 nm/min; in the process of ion beam current density increasing from 15 mA to 35 mA, the etching rate increases constantly, increasing from 1.1 nm/min to 2.2 nm/min; in the process of quantity of oxygen increasing from 2 mL/min to 10 mL/min process, the etching rate increases but decreased a little at 8 mL/min.There are no big changes on surface roughness, can be at 1.8 nm or less.