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Testing of resonant tunneling double barrier heterostructures by BEEM/BEES
Authors:J. Walachová  J. Zelinka  J. Vaniš  S. Karamazov  M. Cukr  P. Zich  D. H. Chow  T. C. McGill
Affiliation:(1) Institute of Radio Engineering and Electronics, Acad. Sci. CR, Chaberská 57, 182 51 Praha 8, Czech Republic;(2) Institute of Physics, Acad. Sci. CR, Cukrovarnická 10, 160 00 Praha 6, Czech Republic;(3) Hughes Research Laboratories, 90265 Malibu, California, U.S.A.;(4) Thomas J. Watson, Sr. Laboratory of Applied Physics, California Institute of Technology, 91125 Pasadena, California, U.S.A.
Abstract:This work shows how ballistic electron emission microscopy and spectroscopy (BEEM/BEES) can be used for study of the tunneling double barrier heterostructures. From positions of resonant levels follows that roughness at the interfaces is present. The variation of the thickness of the well atributed to the existed roughness is estimated using simple calculation. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998. This work is partly supported by the Grant Agency of the Czech Republic under grant No. 102/97/0427.
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