| 有铝激光器和无铝激光器特征温度对比研究 |
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| 引用本文： | 李雅静,彭海涛.有铝激光器和无铝激光器特征温度对比研究[J].电子科技,2015,28(9):172. |
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| 作者姓名： | 李雅静 彭海涛 |
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| 作者单位： | (1.咸阳师范学院 物理与电子工程学院,陕西 咸阳 712000;
2.中国电子科技集团公司第13研究所,河北 石家庄 050051) |
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| 基金项目： | 咸阳师范学院专项科研基金资助项目(12XSYK016) |
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| 摘 要： | 为了测量两种有源区材料半导体激光器的温度灵敏度,文中对InGaAsP/GaAs无铝和AlGaInAs/AlGaAs/GaAs有铝的808 nm大功率半导体激光器,采用阈值电流法衡量两种有源区材料激光器的特征温度。在各种温度下实验性地测量激光器的P-I曲线,并采用线性拟合法得到阈值温度线性关系,实验结果表明有铝激光器温度性能明显优于无铝激光器。
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| 关 键 词： | 有铝激光器 无铝激光器 特征温度 阈值电流法 |
Study on Characteristic Temperature of Al-containing and Al-free High Power Semiconductor Laser Diodes |
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| LI Yajing,PENG Haitao.Study on Characteristic Temperature of Al-containing and Al-free High Power Semiconductor Laser Diodes[J].Electronic Science and Technology,2015,28(9):172. |
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| Authors: | LI Yajing PENG Haitao |
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| Institution: | (1.School of Physics & Electronic Engineering,Xianyang Normal University,Xianyang 712000,China;
2.The 13th Research Institute,CETC,Shijiazhuang 050051,China) |
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| Abstract: | At present,AlGaInAs and InGaAsP have been mainly used in 808 nm high-power laser diode active layer,and the semiconductor laser is very sensitive to temperature.In order to measure the temperature sensitivity of two active layer material LDs,the threshold current method are used for 808 nm high power Al-free InGaAsP/GaAs lasers and Al-containing AlGaInAs/AlGaAs/GaAs lasers to measure the characteristic temperature.We test the P-I curves at various temperatures and obtain the linear relationship between the threshold current and temperature by linear fitting.Experimental results show that the temperature properties of aluminum laser are better than those of the Al-free laser. |
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| Keywords: | Al containing LD Al free LD characteristic temperature threshold current method |
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