二硫化钼二维原子晶体化学掺杂研究进展

以二硫化钼（MoS₂）为代表的半导体二维过渡金属硫族化合物（TMDCs）具有优异的光电特性，在新型电子器件领域展示出广阔的应用前景。二维MoS₂的性能调控与功能协同是实现其在电子器件领域实用化的关键。化学掺杂是调控二维MoS₂的性能并丰富其材料特性最为直接而有效的方法之一。本文重点介绍了基于表面电荷转移、面内取代以及层间插层策略的掺杂方法，讨论了各种掺杂方法的基本原理、最新进展以及局限性，最后展望了二维MoS₂掺杂研究面临的挑战与发展方向。

Recent Advances in the Chemical Doping of Two-Dimensional Molybdenum Disulfide

Semiconducting, two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as molybdenum disulfide (MoS₂) have attracted significant attention because of their unique properties and promising applications in electronic and optoelectronic devices. However, the controllable tuning of the properties of 2D MoS₂ remains a key challenge with regard to its practical application. Among various approaches to addressing this issue, chemical doping is one of the most efficient. This review focuses on three major doping strategies, which are surface charge transfer, in-plane substitution and interlayer intercalation. We discuss the principles, latest progress and limitations of these doping approaches. Finally, we summarize the current challenges and opportunities associated with the chemical doping of 2D MoS₂.