Cu2ZnSn(S,Se)4薄膜太阳电池研究进展

CdTe和Cu(In,Ga)(S,Se)₂ (CIGSSe)光吸收材料在新型化合物半导体太阳电池研究中占据着主导地位。尽管CdTe和CIGS太阳电池拥有较高的转换效率和先进的技术，但是仍存在着一些问题，如所用材料中的元素地壳丰度低或有毒，这阻碍了其未来的大规模应用。近年来，由于Cu₂ZnSn(S,Se)₄ (CZTSSe)薄膜太阳电池使用的元素地壳含量丰富且环境友好，逐渐成为了研究的热点。CZTSSe光吸收材料被认为能够取代CdTe和CIGS成为下一代光伏技术的潜力材料。基于此，本文将简单介绍CZTSSe材料的结构、性质和制备方法。重点阐述CZTSSe材料的组装技术和沉积方法的发展和优势，如基于真空的沉积方法和基于溶液的沉积方法，简述其优缺点。此外，本文对CZTSSe组装和CZTSSe纳米晶制备方法的最新研究进展也进行了总结。最后，对CZTSSe光伏技术的一些限制因素进行了分析，并对CZTSSe薄膜电池未来的研究前景进行了展望。

Advances in Cu2ZnSn(S,Se)4 Thin Film Solar Cells

CdTe and Cu(In,Ga)(S,Se)₂ (CIGSSe) light absorber materials have dominated the research field of compound semiconductor solar cells. Despite the high power conversion efficiencies and technological advances of CdTe and CIGS photovoltaic technologies, certain issues, like rare earth constituent elements or toxic elements, limit their future upscaled applications. In recent years, Cu₂ZnSn(S,Se)₄ (CZTSSe) thin film solar cells have become research hotspots, drawing increased interest. With earth-abundant and environmentallybenign constituent elements, CZTSSe light absorber materials are widely regarded as the next-generation photovoltaic technology that can replace CdTe and CIGS as a promising candidate for terawatt-level power output. In this review, the synthesis, structure, and properties of CZTSSe materials will be discussed. This review will primarily demonstrate the developments and recent advances of different fabrication techniques and deposition methods, such as vacuum-based and solution-based deposition methods, covering their advantages and disadvantages. Recent developments in CZTSSe fabrication methods and CZTSSe nanocrystal preparation approaches will also be reviewed. Finally, some limitations on CZTSSe photovoltaic technology will be analyzed, and directions for improvement will be suggested, helping scientists to make future developments in this field.