Langmuir probe measurements during plasma-activated chemical vapor deposition in the system argon/oxygen/Aluminum isopropoxide

A Langmuir probe investigation of Ar/O₂/Al(OPr¹)₃ plasmas is described. The probe contamination depends on the probe position and the flow of tine carrier gases. Whereus far from the working gas inlet characteristics without any hysteresis were obtained, near to the inlet undisturbed characteristics were recorded only for small gas flows or a low vapor pressure of the precursor. Condensation of the precursor ai the probe surface prior to the plasma excitation was the main source of probe contamination. A decrease ire the plasma potential with respect to the ground observed during experiments was attributed to the formation of a dielectric film on the rf electrode. This resulted in a self-bias responsible for the decrease in plasma potential.