| PECVD a-Si:H薄膜及光电导特性测量和分析(英文) |
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| 引用本文： | 王济身,许春芳,赵成斌,洪建彬. PECVD a-Si:H薄膜及光电导特性测量和分析(英文)[J]. 固体电子学研究与进展, 1989, 0(4) |
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| 作者姓名： | 王济身 许春芳 赵成斌 洪建彬 |
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| 作者单位： | 华东师范大学电子科学技术系(王济身，许春芳，赵成斌)，华东师范大学电子科学技术系(洪建彬) |
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| 摘 要： |
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Determination and Analysis of Photoconductivity of PECVD a-Si:H Films |
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| Abstract: | The thesis introduces the principle and course of a-Si:H films deposited with PECVD technique, the determination of characteristics of photoconductivity, and the variation under different substrate temperatures. (100-300℃). Through the experiment the activation energy is obtained, and the result shows that the best substrate-temperature is 250℃. Further analysis and discussions from distributions of hydrogen are also made. |
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