首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Si3O cluster: excited properties under external electric field and oxygen-deficient defect models
Authors:Xu Guo-Liang  Liu Xue-Feng  Xie Hui-Xiang  Zhang Xian-Zhou and Liu Yu-Fang
Institution:College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, China;College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, China;College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, China;College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, China;College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, China
Abstract:This paper investigates the excited states of Si3O molecule by using the single-excitation configuration interaction and density functional theory. It finds that the visible light absorption spectrum of Si3O molecule comprises the yellow and the purple light without external electric field, however all the visible light is included except the green light under the action of external electric field. Oxygen-deficient defects, which also can be found in Si3O molecule, have been used to explain the luminescence from silicon-based materials but the microstructures of the materials are still uncertain. Our results accord with the experimental values perfectly, this fact suggests that the structure of Si3O molecule is expected to be one of the main basic structures of the materials, so the oxygen-deficient defect structural model for Si3O molecule also has been provided to research the structures of materials.
Keywords:Si3O molecule  excited state  luminescence  oxygen-deficient defects
本文献已被 维普 等数据库收录!
点击此处可从《中国物理 B》浏览原始摘要信息
点击此处可从《中国物理 B》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号