Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE |
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Authors: | Wilson De Carvalho Jr Mario Tosi Furtado Aryton André Bernussi Angelo Luiz Gobbi Mônica Alonso Cotta |
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Institution: | 1. Funda??o Centro de Pesquisa e Desenvolvimento em Telecomunica??es (Funda??o CPqD)/Associa??o Brasileira de Tecnologia de Luz Sincrotron (ABTLuS), CP 6070, 13083-970, Campinas, SP, Brazil 2. Laboratório de Pesquisa em Dispositivos (LPD)/Depto Física Aplicada, IFGW, Unicamp, CP 6165, 13081-970, Campinas, SP, Brazil
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Abstract: | We investigated the influence of the growth rate on the quality of zero-net-strained InGaAsP/InGaAsP/InP multiquantum well
structures for 1.55 μm emission grown by low pressure metalorganic vapor phase epitaxy. The samples consisted of fixed compressive
strained wells (ɛ=+1%) and tensile strained barriers (ɛ=−0.5%) grown with different quaternary bandgap wavelengths (λB=1.1–1.4 μm). Using higher growth rates, we obtained for the first time high quality zero net strained multi quantum well
structures, regardless having constant group V composition in the well and barriers. The samples were analyzed by x-ray diffraction,
photoluminescence and atomic force microscopy techniques. The amplitude of surface modulation roughness along 011] direction
decreased from 20 nm to 0.53 nm with increasing growth rate and/or quaternary compositions grown outside the miscibility gap.
A new deep PL broad emission band strongly correlated with the onset of wavy layer growth is also reported. Broad area and
ridge waveguide lasers with 10 wells exhibited low losses (34 cm−1) and low threshold current densities at infinite cavity length (1020 A·cm−2 and 1190 A·cm−2, respectively). |
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Keywords: | Metalorganic vapor phase epitaxy (MOVPE) InGaAsP/InP ZNS strained structures |
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