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Structural and optical features of nanoporous silicon prepared by electrochemical anodic etching |
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| Authors: | D -A Kim S -I Im C M Whang W -S Cho Y -C Yoo N -H Cho J -G Kim Y -J Kwon |
| Institution: | a Department of Materials Science and Engineering, Inha University, Inchon 402-751, South Korea b Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, South Korea c Institute of Advanced Materials, Inha University, Inchon 402-751, South Korea |
| Abstract: | Nanoporous silicon (NPS) samples were prepared by electrochemical anodic etching of p-type (0 0 1) silicon wafers in HF solution, and some of them were aged in air. The nanostructural, optical and chemical features of the NPS were investigated in terms of etching and aging conditions. The surface of the porous Si exhibits an etched layer with a thickness of 30–40 nm; this layer appears to consist of aggregates of 5–10 nm size nano-crystallites. The NPS exhibited broad photoluminescence (PL) spectra with its peak in the red light region ( 740 nm). After aging the porous samples for 4 weeks in air, we observed the PL intensity became approximately a fifth of that of the as-prepared one, along with a blue shift. It is very likely that the blue shift of the PL peak was caused by the shrinkage of the Si nano-crystallites due to the oxidation in the surface of the nano-crystallites. |
| Keywords: | Etching Porous silicon Photoluminescence Nano-crystallite Aging |
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