Laser damage in silicon photodiodes |
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Authors: | M Kruer R Allen L Esterowitz F Bartoli |
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Institution: | (1) Naval Research Laboratory, 20375 Washington, D.C., USA |
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Abstract: | Thermal damage of silicon photodiodes exposed to intense optical radiation is investigated. Damage thresholds of Si photodiodes irradiated by 1.06 m laser pulses are reported for values of irradiation time, , ranging from 10–8 to 1s. Threshold laser irradiation produces visible microscopic damage and a permanent degradation in photoresponse. The loss of responsivity is associated with degradation of the detector diode characteristics due to laser-induced heating. The time and wavelength dependence agree with the predictions of a thermal model which treats a semi-infinite material irradiated by a Gaussian laser beam. The energy density thresholds are independent of for short irradiation times and asymptotically approach a limiting behaviour which increases as for long times. They are given by the empirical relationE
0=651+217 /tan–1(258 )1/2] J cm–2 for 1.06 m radiation. The thresholds at short irradiation times of detectors damaged by 1.06 m radiation are about 25 times larger than those of detectors exposed to 0.6943 m radiation. The greater susceptibility at 0.6943 m is attributed to a larger optical absorption coefficient. |
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