| 直流电源耦合高功率脉冲非平衡磁控溅射电离特性 |
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| 引用本文： | 牟宗信,牟晓东,王春,贾莉,董闯.直流电源耦合高功率脉冲非平衡磁控溅射电离特性[J].物理学报,2011,60(1):15204-015204. |
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| 作者姓名： | 牟宗信 牟晓东 王春 贾莉 董闯 |
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| 作者单位： | 三束材料改性教育部重点实验室(大连理工大学),大连理工大学物理与光电工程学院,大连 116024 |
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| 基金项目： | 国家自然科学基金(批准号:50407015),辽宁省教育厅科研项目资助的课题. |
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| 摘 要： | 采用直流电源放电形成高功率脉冲非平衡磁控溅射(dc-high power impulse unbalanced magnetron sputtering,dc-HPPUMS 或dc-HiPiUMS),利用雪崩放电的击穿机理形成深度自触发放电,同轴线圈和空心阴极控制放电特性和提高功率密度.磁阱俘获雪崩放电形成的二次电子和形成漂移电流,形成了大电流脉冲放电,放电脉冲电流密度峰值超过100 A/cm2,脉冲频率小于40 Hz.由于放电等离子体远没有达到平衡状态,放电电流主要受到空间电荷效应
关键词：
放电
脉冲技术
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| 关 键 词： | 放电 脉冲技术 |
| 收稿时间： | 2010-02-23 |
Analysis on the ionization of high power pulsed unbalanced magnetron sputtering powered by direct current |
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| Mu Zong-Xin,Mu Xiao-Dong,Wang Chun,Jia Li,Dong Chuang.Analysis on the ionization of high power pulsed unbalanced magnetron sputtering powered by direct current[J].Acta Physica Sinica,2011,60(1):15204-015204. |
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| Authors: | Mu Zong-Xin Mu Xiao-Dong Wang Chun Jia Li Dong Chuang |
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| Institution: | Key Laboratory of M7aterials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, School of Physics and Optoelectronic technology, Dalian University of Technology, Dalian 116024,China;Key Laboratory of M7aterials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, School of Physics and Optoelectronic technology, Dalian University of Technology, Dalian 116024,China;Key Laboratory of M7aterials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, School of Physics and Optoelectronic technology, Dalian University of Technology, Dalian 116024,China;Key Laboratory of M7aterials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, School of Physics and Optoelectronic technology, Dalian University of Technology, Dalian 116024,China;Key Laboratory of M7aterials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, School of Physics and Optoelectronic technology, Dalian University of Technology, Dalian 116024,China |
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| Abstract: | High Power impulse Unbalanced Magnetron Sputtering has been coupled to a direct current source (dc-HPPUMS or dc-HiPUMS). A coaxial coil and an attached hollow cathode were applied to control discharge properties and improve pulsed power density. A large extent breakdown was induced for avalanche discharge mechanism. The magnetic trap on sputtering target traps the secondary electrons excited by the avalanche and forms a drift current in magnetic trap. The peak pulse current density is higher than 100 A/cm2 with a pulse frequency less than 40 Hz. The space charge limited condition controls the discharge for plasma far away from equilibrium. The discharge theory was taken to describe the high ionization mechanism in dc-HPPUMS discharge. The parameters deduced from Child law agree with the experimental results. |
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| Keywords: | discharge pulse technology |
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