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Raman scattering study of dopant homogeneity in GaP and GaAs single crystals |
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| Authors: | G. Irmer J. Monecke W. Siegel |
| Abstract: | Application of Raman scattering as a non-destructive method with high spatial resolution suitable for the determination of charge carrier profiles connected with dopant segregations in polar semiconductors is reported. Single crystals of GaP and GaAs are investigated. The results are in good agreement with electrical measurements. |
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