The study of the influence of deep level defects on GaAs epilayer electrophysical parameters with electron beam and photoelectron paramagnetic resonance methods

Deep level point defects in the GaAs p⁺-p^ˆ−n^ˆ structures, grown by liquid-phase epitaxy, were investigated with electron-beam methods (electron-beam induced current and modulation method) and photo-EPR. It was shown that during the growing process the donor As_Ga antisite defects with levels ev + 0.52 eV and ec — 0,75 eV and acceptor defect with the level ev + 0.44 eV have appeared. The interconnection between the thickness of p^ˆ-layer, the concentration of deep levels defects, diffusion length of the minority carriers in the p° and n°-layers was found.