Deformation state of 49BF-implanted Si wafers after high-temperature thermal annealing

The bending of ⁴⁹BF-implanted Si wafers due to high-temperature annealing (T = 900 to 1100 °C) is investigated by means of X-ray topographic techniques. The results are comperatively considered with those for low-temperature annealing (T ≦ 800 °C) obtained earlier by the authors. It is shown that the most essential differences in low- and high-temperature intervals occur for implantation dose below the amorphization one.