Stability of growth conditions and α-HgI2 crystal habit during growing by temperature oscillation method

On the basis of analysis of the experimental data, it is shown that:

• the crystal growth rate is mainly determined by diffusion in vapour phase;
• the limitation of the growth process by transport leads to an unremitting change of the growth conditions, being the cause of slowing down the growth and the change of the growth rates ratio of the crystallographically different facets, the latter evokes refaceting;
• the limitation of the growth by the transport process is the factor reducing the perfection of the structure and the maximum sizes of single crystals.