| 具有势垒增强层的MSM光电探测器暗电流的计算 |
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| 引用本文： | 覃化,史常忻.具有势垒增强层的MSM光电探测器暗电流的计算[J].固体电子学研究与进展,1998,18(2):176-180. |
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| 作者姓名： | 覃化 史常忻 |
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| 作者单位： | 上海交通大学微电子技术研究所!200030 |
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| 摘 要： | 将具有完全晶格匹配势垒增强层的MSM－PD简化为一维模型，并通过理论分析，得出了它的暗电流特性，进一步得到器件暗电流与势垒增强层的关系。
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| 关 键 词： | 肖特基势垒 势垒增强层 暗电流特性 金属—半导体—金属光电探测器 |
Theoretical Calculation of the Dark Current in MSM-PD with a Barrier-enhancement Layer |
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| Qin Hua, Shi Changxin, Wang Sengzhang.Theoretical Calculation of the Dark Current in MSM-PD with a Barrier-enhancement Layer[J].Research & Progress of Solid State Electronics,1998,18(2):176-180. |
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| Authors: | Qin Hua Shi Changxin Wang Sengzhang |
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| Abstract: | Metal-Semiconductor-Metal Photo-Detector (MSM-PD) with a lattice-matched barrier-enhancement layer is simulated by using an one-dimensionalmodel. The dark current characteristic and the relation of the dark current to theberrier-enhancement layer are derived theoretically. |
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| Keywords: | Schottky Barrier Barrier-enhancement Layer Dark Current Characteristic Metal-Semiconductor-Metal Photo-Detector(MSM-PD) |
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