Influence of Iodine-Containing Solutions on the Condition of a Porous Silicon Surface and Its Photoluminescent Properties |
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Authors: | T V Voloshina I V Kavetskaya V A Karavanskii |
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Institution: | (1) Voronezh State University, 1 Universitetskaya Sq., Voronezh, 394000, Russia;(2) Institute of General Physics, Russian Academy of Sciences, Moscow, Russia |
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Abstract: | The influence of surface treatment of porous silicon in iodine-containing solutions on its photoluminescent properties has been investigated. The porous silicon samples were prepared by anodizing in HF-based electrolytes and placed in fluoride-hydrogen solutions with the addition of iodine immediately after their formation. The surface condition was controlled by IR Fourier spectroscopy methods in the 400–4000-cm–1 range. It has been established that the result of the porous silicon treatment in iodine-containing solutions is a decrease in the intensity of Si–H
x
-bonds without the appearance of additional vibrations in the range under investigation. At the same time, such a treatment substantially affects the spectrum and intensity of porous silicon photoluminescence and increases its stability in subsequent storage. The possible reasons for the revealed phenomena are discussed. |
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Keywords: | porous silicon luminescence surface |
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