Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields |
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| Authors: | V T Dolgopolov M Yu Melnikov A A Shashkin S-H Huang C W Liu S V Kravchenko |
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| Institution: | 1.Institute of Solid State Physics,Russian Academy of Sciences,Chernogolovka,Russia;2.Department of Electrical Engineering and Graduate Institute of Electronics Engineering,National Taiwan University,Taipei,Taiwan;3.National Nano Device Laboratories,Hsinchu,Taiwan;4.Physics Department,Northeastern University,Boston,USA |
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| Abstract: | We have experimentally studied the fractional quantum Hall effect in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers p = 1, 2, 3, and 4. Minima with p = 3 disappear in magnetic fields below 7 T, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors ν = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions. |
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