| 多岛单电子晶体管的实现及其源漏特性分析 |
| |
| 引用本文： | 郭荣辉,赵正平,郝跃,刘玉贵,武一宾,吕苗. 多岛单电子晶体管的实现及其源漏特性分析[J]. 物理学报, 2005, 54(4): 1804-1808 |
| |
| 作者姓名： | 郭荣辉 赵正平 郝跃 刘玉贵 武一宾 吕苗 |
| |
| 作者单位： | (1)河北半导体研究所,石家庄 050053; (2)西安电子科技大学微电子研究所,西安 710071 |
| |
| 基金项目： | 专用集成电路国家级重点实验室基金资助的课题. |
| |
| 摘 要： | 在淀积有纳米间隙栅电极、源电极和漏电极的衬底上生长量子点，制作出多岛结构的单电子晶体管.在77K温度下对源漏特性进行了测试，得到了库仑阻塞特性.并且成功抑制了单岛单电子晶体管中易出现的共隧穿效应，观察到较大的库仑阈值电压.对试验数据进行了分析，阐明了岛的不同结构组态产生的不同输运效果.关键词：单电子晶体管量子点库仑阻塞
|
| 关 键 词： | 单电子晶体管 量子点 库仑阻塞 |
| 文章编号： | 1000-3290/2005/54(04)/1804-05 |
| 收稿时间： | 2004-08-06 |
Realization and output characteristics analysis of the multiple islands single- electron transistors |
| |
| Guo Rong-Hui,ZHAO Zheng-ping,Hao Yue,LIU Yu-gui,WU Yi-bin,Lü Miao. Realization and output characteristics analysis of the multiple islands single- electron transistors[J]. Acta Physica Sinica, 2005, 54(4): 1804-1808 |
| |
| Authors: | Guo Rong-Hui ZHAO Zheng-ping Hao Yue LIU Yu-gui WU Yi-bin Lü Miao |
| |
| Abstract: | In this paper, a new kind of multiple islands single-electron transistor is prepared successfully with indium quantum dots deposited among nanometer-gap electrodes. The output characteristics are tested and the Coulomb blockade effects are observed. As a result, the harmful co-tunneling effects occurring usually in the single island single-electron transistors are weakened significantly, and a big threshold voltage is got. At the end of the paper, the different transport states from source to drain are discussed. |
| |
| Keywords: | single-electron transistors quantum dots Coulomb blockade |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
|
点击此处可从《物理学报》下载免费的PDF全文 |
