| 用低能电子衍射计算Ni(001)表面化学吸附氧族元素的表面原子层间距 |
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| 引用本文： | 蓝田,徐飞岳.用低能电子衍射计算Ni(001)表面化学吸附氧族元素的表面原子层间距[J].化学学报,1989,47(2):112-120. |
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| 作者姓名： | 蓝田 徐飞岳 |
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| 作者单位： | 成都电讯工程学院微电子技术与电子材料系 |
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| 摘 要： | 用一维能带理论计算了Ni(001)表面化学吸附氧族元素(O、S、Se和Te)的表面原子层间距dx(X表示O、S、Se和Te). 当表面原子层间距dO=0.87±0.005埃, dS=1.29±0.01埃, dSe=1.44±0.01埃和dTe=1.93±0.01埃时, LEED谱计算值与实验结果一致.
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| 关 键 词： | 镍 化学吸附 表面化学 电子衍射 原子间距 ＶＩＡ族元素 |
The calculation of surface atomic layer distances of chemisorption chalcogen on Ni(001) surface by low-energy-electron diffraction |
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| LAN TIAN,XU FEIYUE.The calculation of surface atomic layer distances of chemisorption chalcogen on Ni(001) surface by low-energy-electron diffraction[J].Acta Chimica Sinica,1989,47(2):112-120. |
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| Authors: | LAN TIAN XU FEIYUE |
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| Abstract: | The surface atomic layer distances dX (X = O, S, Se, Te) of chemisorbed chalcogens on Ni(001) surface was calculated by using one-dimensional band theory. The calculated LEED spectra are in very good agreement with the experimental results, when the surface atomic layer distances dO = 0.875 ?0.005, dS = 1.29 ?0.01, ds = 1.44 ?0.01, and dTe = 1.93 ?0.01 ? |
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| Keywords: | NICKEL CHEMICAL ADSORPTION SURFACE CHEMISTRY ELECTRON DIFFRACTION INTERATOMIC DISTANCE GROUP ELEMENT VIA |
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