Damage studies on the system^{111} mathop {In}limits^ to underline {Ni}

Lattice damage after implantation of¹¹¹In in Ni has been studied applying the DPAC technique to the 171–245 keV -ray cascade in the daughter nucleus¹¹¹Cd. Implantations were carried out at 10 K and at 300 K. The low temperature implantation yields a higher regular substitutional fraction (80%) than the room temperature implantation (40%). The annealing behaviour of both implants above RT is the same. In addition, two distinct defect-associated sites were observed in isochronal annealing sequences. A microscopic model for these defects is presented, which takes into account magnetic and electric hyperfine interaction strengths, binding energies and site populations as a functions of temperature.