Solution of semiconductor equations using a fully adaptive mesh strategy |
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Authors: | Armstrong GA Ferguson RS Flynn JG |
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Institution: | Queen's University of Belfast, Department of Electrical Engineering, Belfast, UK; |
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Abstract: | The letter presents a novel means of mesh adaption when the finite-element method is applied to the semiconductor equations. Using triangular elements it has the ability to avoid obtuse angles while still allowing flexibility in mesh design. The usefulness of the method is demonstrated by a simulation of an MOS device operating at a high drain voltage where generation due to impact ionisation becomes significant. |
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