| Si,GaAs和LiNbO3单晶的堵塞效应 |
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| 引用本文： | 陈昌,魏成连,董玉兰,刘世杰,夏广昌,范景云,王启良,高之纬.Si,GaAs和LiNbO3单晶的堵塞效应[J].物理学报,1979,28(3):324-333. |
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| 作者姓名： | 陈昌 魏成连 董玉兰 刘世杰 夏广昌 范景云 王启良 高之纬 |
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| 作者单位： | 中国科学院高能物理研究所 |
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| 摘 要： | 我们利用背散射方法得到Si,GaAs和LiNbO3单晶堵塞图,以及GaAs单晶{110},{100}和{112}面堵塞半角ψ1/2值.并得到因离子注入受损伤Si片{110}面堵塞坑深度随注入剂量增加而变浅的结果。作为对实验装置和方法的检验,我们也得到了Si单晶堵塞图和测量了Si单晶{110},{111}和{100}晶面堵塞半角ψ1/2值。
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| 收稿时间： | 1978-05-29 |
THE BLOCKING EFFECT OF Si, GaAs AND LiNbO3 SINGLE CRYSTALS |
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| CHEN CHANG,WEI CHENG-LIAN,DONG YU-LAIN,LIU SHI-JIE,XIA GUANG-CHANG,FAN JING-YUN,WANG QI-LIANG and GAO ZHI-WEI.THE BLOCKING EFFECT OF Si, GaAs AND LiNbO3 SINGLE CRYSTALS[J].Acta Physica Sinica,1979,28(3):324-333. |
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| Authors: | CHEN CHANG WEI CHENG-LIAN DONG YU-LAIN LIU SHI-JIE XIA GUANG-CHANG FAN JING-YUN WANG QI-LIANG and GAO ZHI-WEI |
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| Abstract: | By making use of the back scattering method Si, GaAs and LiNbO3 Single Crystal blocking patterns were obtained and GaAs single crystal {110}, {100} and {112} plane blocking halfangle ψ1/2 values were estimated. We have found that the depth of the {110} plane blocking dip of Si slice damaged due to ion implanting becomes shallow when implantation dose increases. In order to check the experimental apparatus and the method, we have also obtained Si single crystal blocking pattern and measured the values of Si single crystal {110}, {111} and {100} crystal plane blocking halfangles |
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