Pulsed laser deposition conditions and superconductivity of FeSe thin films |
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Authors: | A Tsukada K E Luna R H Hammond M R Beasley J F Zhao S H Risbud |
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Institution: | (1) Department of Physics, Alagappa University, Karaikudi, 630 003, India;(2) Department of Electrical and Computer Engineering, The University of Arizona, Tucson, AZ 85721, USA;(3) Department of Electrical and Computer Engineering, Ajou University, Suwon, 443 749, Korea; |
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Abstract: | We report the effects of growth conditions on the superconducting properties of FeSe films epitaxially grown on LaAlO3 substrates by pulsed laser deposition (PLD). Customary materials characterization techniques X-ray diffraction (XRD), in-situ
X-ray photoelectron spectroscopy (XPS), in-situ ultra-violet photoelectron spectroscopy (UPS), and scanning electron microscopy
(SEM)] revealed the films had a c-axis oriented tetragonal structure with lattice constants dependent on the growth temperature (varied from 100 to 600°C).
The standard four-point probe method was used to measure the resistivity and superconducting transitions. Films grown at 400–550°C
showed a clear superconducting onset but no zero resistance down to 2 K. The highest superconducting onset temperature (TconsetT_{\mathrm{c}}^{\mathrm{onset}}) of 8 K was observed in films grown at 500°C and the onset temperature was clearly correlated to the ratio of the lattice
constants (c/a). As the thickness of the FeSe films increased from 27 nm to 480 nm, TconsetT_{\mathrm{c}}^{\mathrm{onset}} also increased as the strain in the system was relaxed. |
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