Carrier mobility and relaxation time in BiCuSeO

To obtain thermoelectric properties of materials, a constant relaxation time approximation is generally employed. By employing deformation potential theory, a derivation of relaxation time and carrier mobility of BiCuSeO system is proposed combining with density functional theory calculation. And the inter-valley scattering, acoustic phonon scattering and ionized impurity scattering were considered in the model. The calculated values of relaxation time and carrier mobility in BiCuSeO are in good agreement with the results of experiment. The results suggest that acoustic phonon scattering is in dominant and the constant relaxation time approximation is reasonable in lightly doped sample, and the ionized impurity scattering play a significant role in heavily doped system.