The role of the negatively charged (Si3?Si?F2)? complexes in interactions of fluorine with the (111) surface of silicon

We used the AM1 quantum chemical and cluster models to study the mechanism of formation of a SiF₂-like layer and dissociation of the Si−Si bond during the interaction of atomic fluorine with the (111) surface of silicon. It is shown that the negatively charged (Si₃−Si−F₂)⁻ complex with the five-coordinated centered silicon atom plays an important part in these processes. The above complex participates in the interaction of atomic fluorine with silicon to form a SiF₂-like layer and break the subsurface Si−Si bonds without penetration of fluorine atoms into the subsurface silicon layers. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Translated fromZhurnal Strukturnoi Khimii, Vol. 37, No. 1, pp. 14–21, January–February, 1996. Translated by I. Izvekova