OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system |
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Authors: | Zhou Zu-Yuan Chen Guang-Chao Tang Wei-Zhong Lü Fan-Xiu |
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Institution: | School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China |
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Abstract: | This paper used optical emission spectroscopy (OES) to study the gas
phase in high
power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The
results show that all the deposition parameters (methane concentration,
substrate temperature, gas flow rate and ratio of H2/Ar) could strongly
influence the gas phase. C2 is found to be the most sensitive radical
to deposition parameters among the radicals in gas phase. Spatially resolved
OES implies that a relative high concentration of atomic H exists near the
substrate surface, which is beneficial for diamond film growth. The
relatively high concentrations of C2 and CH are correlated with high
deposition rate of diamond. In our high deposition rate system, C2 is
presumed to be the main growth radical, and CH is also believed to
contribute the diamond deposition. |
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Keywords: | gas phase OES diamond film high power DC arc plasma
jet CVD |
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