The growth of antimonides by MOVPE

There are three main reasons for the study of antimonides, they are the optical [mainly infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly ordering and spinodal decomposition] properties. These properties, together with the various techniques used to measure them, are discussed in the context of several difficulties from which the growth of antimonides suffer compared to the growth of nitrides, arsenides or phosphides. These difficulties include the vapour pressure of antimony over the growing surface, the lack of a stable group V hydride, the kinetically controlled nature of the growth and the lack of an insulating antimonide substrate. The effect of these difficulties on the growth of the binary materials, and hence, the various antimonide based devices such as lasers, LEDs, photodetectors, and Hall probes; will be discussed.