Piezoresistive elements of polycrystalline semiconductor thin films |
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| Affiliation: | 1. UNESP–Univ. Estadual Paulista, POSMAT-Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, Av. Eng. Luiz Edmundo Carrijo Coube 14-01, Bauru, SP 17033-360, Brazil;2. DC-FC-UNESP–Univ. Estadual Paulista, Av. Eng. Luiz Edmundo Carrijo Coube 14-01, Bauru, SP 17033-360, Brazil;3. University of Rome “La Sapienza”, Department of Chemistry, Piazzale Aldo Moro 5, Rome, RM, Italy;1. Henan Key Laboratory of Photovoltaic Materials and Laboratory of Low-Dimensional Materials Science, Henan University, Kaifeng 475004, China;2. School of Physics & Electronics, Henan University, Kaifeng 475004, China;3. School of Humanities, Shanghai University of Finance and Economics, Shanghai 200433, China;1. Laboratoire optoélectronique et composants, Department of Physics, Sétif, Algeria;2. FIIS, Schottkystrasse 10, 91058 Erlangen, Germany |
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| Abstract: | Polycrystalline Si and Ge films have been prepared by the CVD method and have been used as sensing elements of pressure sensors that have a semiconductor/insulator/stainless steel structure. Values of the gauge factor were 20 and 30 for polycrystalline Si and Ge films, respectively. Hysteresis and deviation from linearity were less than 0.6%. |
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