六硼化镧场发射阴极阵列的制作及特性

 采用氧等离子体氧化刻蚀工艺，制备出尖锐的六硼化镧（LaBLaB₆）微尖锥场发射阵列。在二极管结构中测试了LaB₆-FEAs的场发射性能，得到了真空度为5×10^-5 Pa 下的I-V曲线及相应的Fowler-Nordheim节点。结果表明，由于LaBLaB₆材料较低的逸出功，使得阴极的开启电压较小，开启场仅为7 V/μm。此外，将氧等离子体氧化刻蚀方法与氩氧等离子体刻蚀方法和电化学刻蚀方法进行了比较，表明氧等离子体氧化刻蚀方法是制备LaB₆场发射阴极阵列的一种理想工艺。

Fabrication and field emission characteristics of LaB6 field-emitter arrays

Lanthanum hexaboride field-emitter arrays(LaB6 FEAs) with tip structures are fabricated by oxygen plasma oxidation-etching method. The field emission characteristics are studied in a conventional diode test cell in vacuum system. LaB6-FEAs exhibit a much lower turn-on field of 7 V·μm-1 due to its lower work function of 2.6 eV. The Fower-Nordheim plot obtained from the current-voltage characteristic is found to be nearly linear in accordance with the quantum mechanical tunneling phenomenon. In addition, oxygen plasma oxidation-etching method is also compared with argon-oxygen plasma etching method and electro-chemical etching method, which indicates that oxygen plasma oxidation-etching method is a very promising fabrication technique for the preparation of LaB6-FEAs.