水平腔面发射半导体激光器研究进展

近年来,水平腔面发射半导体激光器具有高功率、高光束质量及易封装集成等优良性能,已成为激光器领域的研究热点。本文详细阐述了几种水平腔面发射半导体激光器的结构设计、工作原理以及激光输出特性,并对该激光器国内外最新研究进展与发展现状进行了总结和论述。在此基础上,对该激光器的研究方向和发展趋势进行了分析与展望。目前,水平腔面发射半导体激光器的激光输出功率可达瓦级,美国Alfalight公司引入曲线形光栅的单一发射器输出功率可达73 W。随着应用领域的不断拓展,中远红外波段水平腔面发射激光器将成为未来的研究焦点。

Research progress of horizontal cavity surface emitting semiconductor lasers

In recent years, horizontal cavity surface emitting semiconductor lasers have become a hot research topic in the field of lasers due to its excellent properties such as high power,high beam quality,easy packaging,integration and so on. In this paper, we describe several types of horizontal cavity surface emitting semiconductor lasers and their working principle, structure design and features. Then, we summarize and review the present research and development of the proposed lasers at home and abroad, and on this basis, aiming at the research work for horizontal cavity surface-emitting semiconductor lasers and development trends, a further analysis and outlook are given. Currently, the output power of the horizontal cavity surface emitting semiconductor lasers has achieved watts level, and the output power of single transmitter producted by Alfalight company can reach up to 73 W with curved grating. With the expansion of application fields, far infrared band horizontal cavity surface emitting lasers will become focus in the future.