|
|||||
|
|
Investigation on a solution to improve the irradiation reliability of SOI NMOSFET |
|
| Authors: | YU Wen-Jie ZHANG Zheng-Xuan HE Wei TIAN Hao CHEN Ming WANG Ru BI Da-Wei ZHANG Shuai WANG Xi |
| Institution: | YU Wen-Jie1) ZHANG Zheng-Xuan HE Wei TIAN Hao CHEN Ming WANG Ru BI Da-Wei ZHANG Shuai WANG Xi |
| Abstract: | A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect. |
| Keywords: | SOI irradiation total dose effect NMOSFET |
| 本文献已被 CNKI 等数据库收录！ | |
| 点击此处可从《中国物理 C》浏览原始摘要信息 | |
| 点击此处可从《中国物理 C》下载免费的PDF全文 | |