An Improved Pinchoff Equivalent Circuit Model for Determining PHEMT Model Parameters for Millimeterwave Application

An improved equivalent circuit model under pinchoff condition for extracting parasitic model parameters for Double Heterojunction δ-doped PHEMTs is presented. Good prediction for S parameters and noise performance are obtained up to 40GHz. A modified parameter extraction technique based on this new model was use to determine a PHEMT equivalent circuit model. Signification improvements of the accuracy of S parameters are obtained by using the new pinchoff model.