A new physics-based self-heating effect model for 4H-SiC MESFETs |
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| Authors: | Cao Quan-Jun Zhang Yi-Men and Zhang Yu-Ming |
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| Institution: | Key Lab of Education Ministry for Wide Band-Gap
Semiconductor Materials and Devices, School of Microelectronics,
Xidian University, Xi'an 710071, China |
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| Abstract: | A new self-heating effect model for 4H-SiC MESFETs is proposed based
on a combination of an analytical and a computer aided design (CAD)
oriented drain current model. The circuit oriented expressions of
4H-SiC low-field electron mobility and in-complete ionization rate,
which are related to temperature, are presented in this model, which
are used to estimate the self-heating effect of 4H-SiC MESFETs. The
verification of the present model is made, and the good agreement
between simulated results and measured data of DC I-V curves with
the self-heating effect is obtained. |
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| Keywords: | 4H silicon carbide metal semiconductor field effect transistor self-heating effect computer
aided design |
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