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Acceptors in Li doped NiO |
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| Authors: | S. Hüfner P. Steiner F. Reinert H. Schmitt P. Sandl |
| Affiliation: | 1. Fachbereich Physik, Universit?t des Saarlandes, W-6600, Saarbrücken, Federal Republic of Germany 2. Max-Planck-Institut für Plasmaphysik, Euratom Association, W-8046, Garching, Federal Republic of Germany |
| Abstract: | The electronic structure of the Li doped large gap semiconductor (insulator) NiO is investigated by photoemission and inverse photoemission spectroscopy. Spectral weight is produced by the Li doping within the gap at 1.4 eV above the top of the valence band. It is interpreted as due to an acceptor level associated with a LiO complex. |
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