Meyer–Neldel rule in fullerene field-effect transistors |
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Authors: | Mujeeb Ullah T B Singh H Sitter and N S Sariciftci |
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Institution: | (1) Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar, 143005, India;(2) Department of Physics, University of Botswana, Gaborone, Botswana; |
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Abstract: | The temperature dependence of the field-effect mobility is investigated in vacuum evaporated C60-based organic field-effect transistors. The results show a thermally activated behavior with an activation energy that depends
on the field-induced charge carrier density in the transistor channel. Upon extrapolation of the data in an Arrhenius plot
we find an empirical relation, termed the Meyer–Neldel rule, which states that the mobility prefactor increases exponentially
with the activation energy. Based on this analysis a characteristic temperature is extracted. The possible implications of
this observation in terms of charge transport in fullerene-based field-effect transistors are discussed. |
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