Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth

Carbon-doped GaAs with dopant concentrations up to about 10²⁰ cm^–3 has been grown by molecular beam epitaxy. Above a critical carbon concentration, which depends on the deposition parameters, the surface deteriorates and loses its mirror-like appearance. From X-ray diffractometry and scanning electron microscopy, a diagram is established separating two areas with rough and mirror-like surface morphologies. The electrical properties as well as the morphology of GaAs : C can be simultaneously improved by a careful adjustment of the deposition parameters according to this diagram. On leave at: Tokyo Institute of Technology, Research Center for Quantum Effect Electronics, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan