Outdiffusion of deep electron traps in epitaxial GaAs |
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| Authors: | A. Mircea A. Mitonneau L. Hollan A. Brière |
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| Affiliation: | (1) Laboratoire d'Electronique et de Physique Appliquée, F-94450 Limeil-Brévannes, France |
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| Abstract: | The annealing by outdiffusion of the “A-center” in GaAs (a deep electron trap, sometimes attributed to oxygen) has been studied quantitatively, and the diffusion coefficient determined as a function of temperature between 600 and 750 centigrade. Work supported in part by the Direction Générale de la Recherche Scientifique et Technique (D.G.R.S.T.) |
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| Keywords: | 66 71.55 |
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