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Magnetoresistivity in a tilted magnetic field in p-Si/SiGe/Si heterostructures with an anisotropic g-factor. Part II |
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| Authors: | I L Drichko I Yu Smirnov A V Suslov O A Mironov D R Leadley |
| Institution: | 1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia 2. National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA 3. Warwick SEMINANO R&D Centre, University of Warwick Science Park, Coventry, CV4 7EZ, UK 4. Department of Physics, University of Warwick, Coventry, CV4 7AL, UK |
| Abstract: | The magnetoresistance components ??xx and ??xy are measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of the temperature, field, and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for the sample with the hole density p = 2 × 1011 cm?2. This transition is due to the crossing of the 0?? and 1?? Landau levels. However, in another sample with p = 7.2 × 1010 cm?2, the 0?? and 1?? Landau levels coincide for angles ?? = 0?C70°. Only for ?? > 70° do the levels start to diverge which, in turn, results in the energy gap opening. |
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