An extension of the multiple-trapping model |
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Authors: | V P Shkilev |
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Institution: | 1. Institute of Surface Chemistry, National Academy of Sciences of Ukraine, Kiev, 03164, Ukraine
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Abstract: | The hopping charge transport in disordered semiconductors is considered. Using the concept of the transport energy level, macroscopic equations are derived that extend a multiple-trapping model to the case of semiconductors with both energy and spatial disorders. It is shown that, although both types of disorder can cause dispersive transport, the frequency dependence of conductivity is determined exclusively by the spatial disorder. |
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