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Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates |
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| Authors: | I N Ivukin D M Artem’ev V E Bugrov M A Odnoblyudov A E Romanov |
| Institution: | 1. Optogan Group, Tallinskoe sh. 206, St. Petersburg, 198205, Russia 2. St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskii pr. 49, St. Petersburg, 197101, Russia 3. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia |
| Abstract: | The stress-strain state in thin structured gallium nitride films on sapphire substrates containing open pores has been simulated. The results have been obtained by the finite element method in the commercial program complex. The stress intensity factor K I has been calculated for the model considering a crack at the GaN/sapphire interface near an open pore. Based on the calculations of elastic fields, the redistribution of stresses by a structure with an ordered array of open pores in gallium nitride films has been estimated. |
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