Regular domain structures fabricated by an electron beam in stoichiometric LiNbO3 crystals |
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| Authors: | L. S. Kokhanchik M. N. Palatnikov O. B. Shcherbina |
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| Affiliation: | 1. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ul. Institutskaya 6, Chernogolovka, Moscow oblast, 142432, Russia
2. Tananaev Institute of Chemistry and Technology of Rare Elements and Mineral Raw Materials, Kola Science Center of the Russian Academy of Sciences, Akademgorodok 26a, Apatity, Murmansk oblast, 184209, Russia
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| Abstract: | Electron beam writing of regular domain structures in Z-cuts 0.75 mm thick of stoichiometric and close to stoichiometric LiNbO3 crystals has been carried out. Crystals have been grown by the Czochralski method from a melt with excess Li2O (58.6 mol %) and from a congruent-composition melt in the presence of 6 wt % K2O alkali solvent (flux). In both crystals, threshold charge doses required to form individual domains have been determined, and the optimal conditions of periodic structure patterning by sequential local irradiations have been found. Domain gratings of similar type (with periods of 6.5, 7, and 10 ??m) are formed in both types of stoichiometric crystals. |
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