| p层厚度对Si基GaN垂直结构LED出光的影响 |
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| 引用本文： | 陶喜霞,王立,刘彦松,王光绪,江风益.p层厚度对Si基GaN垂直结构LED出光的影响[J].发光学报,2011,32(10):1069-1073. |
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| 作者姓名： | 陶喜霞 王立 刘彦松 王光绪 江风益 |
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| 作者单位： | 南昌大学 国家硅基LED工程技术研究中心, 江西 南昌 330047 |
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| 基金项目： | 国家自然科学基金(51072076,61040060);国家高技术研究发展“863”计划(2009AA03A199)项目;教育部长江学者和创新团队发展计划(IRT0730)资助的项目 |
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| 摘 要： | 利用金属有机化学气相沉积(MOCVD)法在Si衬底上生长了一系列具有不同p层厚度d的InGaN/GaN蓝光LED薄膜并制备成垂直结构发光二极管(VLEDs),研究了 p层厚度即p面金属反射镜与量子阱层的间距对LED出光效率的影响,并采用F-P干涉模型进行了理论分析.结果显示,光提取效率受d影响很大,随d的增加呈现类似阻...
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| 关 键 词： | LED GaN 垂直结构 出光 p层厚度 |
| 收稿时间： | 2011-06-28 |
Effects of The Thickness of p-type GaN on Light Extraction of GaN Based Vertical Light Emitting Diodes on Silicon Substrate |
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| TAO Xi-xia,WANG Li,LIU Yan-Song,WANG Guang-xu,JIANG Feng-yi.Effects of The Thickness of p-type GaN on Light Extraction of GaN Based Vertical Light Emitting Diodes on Silicon Substrate[J].Chinese Journal of Luminescence,2011,32(10):1069-1073. |
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| Authors: | TAO Xi-xia WANG Li LIU Yan-Song WANG Guang-xu JIANG Feng-yi |
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| Institution: | National Engineering Technology Research Center for LED on Silicon Substrate, Nanchang University, Nanchang 330047, China |
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| Abstract: | The relationship between the thickness d of p-type GaN and light extraction efficiency of GaN based vertical light emitting diodes (VLEDs) was described in this work. The VLEDs were grown on silicon by metal organic chemical vapour deposition (MOCVD). A series of VLEDs were fabricated with varied thickness of p-type GaN. It showed that the thickness d was in the order of wavelength and it had a significant influence on extraction efficiency due to interferences. The maximum in extraction efficiency was two times more than the neighboring minimum, which were located at 0.73λn and 1.01λn, respectively. Therefore, the extraction efficiency of VLEDs can be enhanced by optimizing the thickness of p-type GaN. |
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| Keywords: | LED GaN vertical structure light extraction thickness of p-type GaN |
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